IBM and TDK launch joint research and development project for advanced MRAM

20 August 2007

IBM and TDK Corporation today announced a joint research and development programme to develop high capacity magnetic random access memory (MRAM) technology utilising the spin momentum transfer effect.

The companies expect that harnessing the spin momentum transfer effect will allow a much more compact memory cell than is possible with present approaches.

The two companies will combine their respective expertise in areas of fundamental research for new memory technology and magnetic device development to create a high density, high capacity MRAM integrated circuit which can be used as standalone memory or embedded into other IC solutions.

"This collaborative initiative reinforces IBM's commitment to explore new phenomena for memory applications," said Dr T C Chen, vice president, science and technology, IBM Research. "The project will focus on creating and demonstrating advanced magnetic materials in demanding memory chip designs."

"This joint research and development will broaden the application of magnetic materials which has been TDK's core technology since 1935," said Minoru Takahashi, chief technology officer, TDK Corporation.