IBM scientists demonstrate world's fastest raphene transistor
06 Feb 2010
In a just-published paper in Science magazine, IBM researchers have demonstrated a radio-frequency graphene transistor with the highest cut-off frequency achieved so far for any graphene device - 100 billion cycles/second (100 GigaHertz).
 |
| CAPTION: IBM Scientists Demonstrate World's Fastest Graphene |
The high frequency record was achieved using wafer-scale, epitaxially grown graphene using processing technology compatible to that used in advanced silicon device fabrication.
"A key advantage of graphene lies in the very high speeds in which electrons propagate, which is essential for achieving high-speed, high-performance next generation transistors," said Dr T C Chen, vice president, science and technology, IBM Research.
"The breakthrough we are announcing demonstrates clearly that graphene can be utilised to produce high performance devices and integrated circuits."
Graphene is a single atom-thick layer of carbon atoms bonded in a hexagonal honeycomb-like arrangement. This two-dimensional form of carbon has unique electrical, optical, mechanical and thermal properties and its technological applications are being explored intensely. (See: European collaboration's breakthrough in developing graphene)
