Samsung unveils 4Gbit DRAM, double the density of previous chips

31 Jan 2009

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Samsung has announced that it has developed the first 4-Gb (Gigabit, not Gigabyte) DDR3 PC memory chip, which it claims will run using significantly less power consumption than current DDR3 products.

The chip is targeted to work in conjunction with the new generation of "green" PC's to create a much more efficient system, however the technology will also find its way into dual in-line memory modules, servers and laptops. The technology also paves the way for DIMM modules of up to 32GB.

"We have leveraged our strength in innovation to develop the first 4-Gb DDR3, in leading the industry to higher DRAM (Dynamic Random Access Memory) densities. By designing our 4Gbit DDR3 using state-of-the-art 50nm class technology, we are setting the stage for what ultimately will result in significant cost savings for servers and for the overall computing market," Kenin Lee, vice president of Samsung Semiconductor Inc., said in a statement.

The DDR3 is capable of transferring input / output data eight times faster than previous DDR2 models, and can do so as a 30 per cent reduction in power consumption. Currently, only 29 per cent of DRAM products sold this year will include DDR3 system memory, though this percentage is expected to increase steadily to around 72 per cent by 2011.

The news has proven Samsung's willingness to push forward and expand their technology, despite the noticeable decrease in the PC and consumer electronics market. This month Samsung reported its first-ever quarterly loss due to a drop in sales of appliances, LCD's and memory chips.

In September, Samsung announced its development of the world's first 50nm-class 2Gbit DDR3 DRAM. It now sells a line of high-performance DDR3 products using that process technology with 4Gbit, 2Gbit and 1Gbit chips.

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